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* THz Imaging Camera

Feature & Specification
The detectors are fabricated from GaAs high-mobility heterostructure in the standard semiconductor cycle using conventional optical lithography. The imaging sensor is manufactured on a single wafer. That process ensures high homogeneity and reproducibility of the plasmonic detector parameters (pixel-to-pixel deviation responsivity is within 20-percent range). Each unit detector proved to have room-temperature responsivity up to 50 kV/W with read-out circuitry and noise equivalent power 1 nW/Hz^0.5 in the frequency range 10 GHz ? 1 THz. The detection mechanism is based on transformation of incident THz radiation into two-dimensional electron system (2DES) plasma oscillation. Plasma wave is then rectified on the inhomogeneity of 2DES electron density in the defect region.

- New physical principle employed
- Operates at frequencies (0.05 - 0.7 THz), where most common materials are transparent
- Different models are available: 256 pixels; 1024 pixels; 4096 pixels - to accomodate any budget
- USB feeding and programming
- Low-cost
- 1-year warranty

* Model: Tera-256
- 256 pixels (16 x 16 array)
- 1.5 x 1.5 mm pixel size
- 50 kV/W responsivity with NEP=1 nW/Hz^0.5
- 10 cm x 10 cm x 5.5 cm device size

* Model: Tera-1024
- 1024 pixels (32 x 32 array)
- 1.5 x 1.5 mm pixel size
- 50 kV/W responsivity with NEP=1 nW/Hz^0.5
- 10 cm x 10 cm x 5.5 cm device size

* Model: Tera-4096
- 4096 pixels (64 x 64 array)
- 1.5 x 1.5 mm pixel size
- 50 kV/W responsivity with NEP=1 nW/Hz^0.5
- 20 cm x 20 cm x 10 cm device size